MTP55N06Z - TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain to source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power
MTP55N06Z Features
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