MTP55N06Z - TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain to source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power
MTP55N06Z Features
* or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damage
