* the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are induct
MTD20N03HDL Datasheet (250.81 KB)
MTD20N03HDL
Motorola
250.81 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Moun.
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