* slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads ar
MTD20P03HDL Datasheet (244.94 KB)
MTD20P03HDL
Motorola
244.94 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Moun.
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