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MTD20P03HDL TMOS POWER FET

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Moun.

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Datasheet Specifications

Part number
MTD20P03HDL
Manufacturer
Motorola
File Size
244.94 KB
Datasheet
MTD20P03HDL_Motorola.pdf
Description
TMOS POWER FET

Features

* slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads ar

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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