MTD20P03HDL Datasheet - Motorola

MTD20P03HDL TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Mount Designer's MTD20P03HDL Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low volt.

MTD20P03HDL Features

* slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads ar

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