MTD2N50E Datasheet (Motorola) - TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

MTD2N50E, TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition this advanced TMOS E FET is designed to withstand high energy in

MTD2N50E Features

* would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the dat