Datasheet Details
- Part number
- MTD2N50E
- Manufacturer
- Motorola
- File Size
- 299.02 KB
- Datasheet
- MTD2N50E_Motorola.pdf
- Description
- TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
MTD2N50E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.
MTD2N50E Features
* would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the dat
MTD2N50E Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination
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