* would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the dat
MTD2N50E Datasheet (299.02 KB)
MTD2N50E
Motorola
299.02 KB
Tmos power fet 2.0 amperes 500 volts rds(on) = 3.6 ohm.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.
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