Datasheet4U Logo Datasheet4U.com

MTD2N40E Datasheet - ON Semiconductor

MTD2N40E Power MOSFET

MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for high voltage, hig.

MTD2N40E Features

* rss 0 5 10 15 20 25 1 10 100 1000 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 VGS , GATE

MTD2N40E-ONSemiconductor.pdf

Preview of MTD2N40E PDF
MTD2N40E Datasheet Preview Page 2 MTD2N40E Datasheet Preview Page 3

Datasheet Details

Part number:

MTD2N40E

Manufacturer:

ON Semiconductor ↗

File Size:

256.34 KB

Description:

Power mosfet.

📁 Related Datasheet

MTD2N40E TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM (Motorola)

MTD2N50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM (Motorola)

MTD2001 Stepping Motor Driver ICs (Shindengen Electric)

MTD2001M Photo Diode (Marktech Corporate)

MTD2002F Motor Driver (Shindengen Electric)

MTD2003 Stepping Motor Driver ICs (Shindengen Electric)

MTD2003B Stepper Motor Driver IC (SHINDENGEN)

MTD2003F Stepping Motor Driver ICs (Shindengen Electric)

TAGS

MTD2N40E MTD2N40E Power MOSFET ON Semiconductor

MTD2N40E Distributor