Part number:
MTD2N40E
Manufacturer:
File Size:
256.34 KB
Description:
Power mosfet.
MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N Channel DPAK This high voltage MOSFET uses an advanced termination scheme to prov.
* rss 0 5 10 15 20 25 1 10 100 1000 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 VGS , GATE
MTD2N40E Datasheet (256.34 KB)
MTD2N40E
256.34 KB
Power mosfet.
MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N Channel DPAK This high voltage MOSFET uses an advanced termination scheme to prov.
📁 Related Datasheet
MTD2N40E TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM (Motorola)
MTD2N50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM (Motorola)
MTD2001 Stepping Motor Driver ICs (Shindengen Electric)
MTD2001M Photo Diode (Marktech Corporate)
MTD2002F Motor Driver (Shindengen Electric)
MTD2003 Stepping Motor Driver ICs (Shindengen Electric)
MTD2003B Stepper Motor Driver IC (SHINDENGEN)
MTD2003F Stepping Motor Driver ICs (Shindengen Electric)
MTD2003G Stepper Motor Driver IC (SHINDENGEN)
MTD2005 Stepping Motor Driver ICs (Shindengen Electric)