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MTP20N20E TMOS POWER FET

MTP20N20E Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N20E/D Designer's TMOS E-FET .™ Power Field Effect Transist.

MTP20N20E Features

* operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C m taS hee t4U . co 4000 C, CAPACITANCE (pF) 3000 Crss Ciss 2000 1000 0 10 Coss 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO

MTP20N20E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTP20N20E
Manufacturer
Motorola
File Size
173.64 KB
Datasheet
MTP20N20E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP20N20E-like datasheet