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MTP20N20E - TMOS POWER FET

Features

  • operated into an inductive load; however, snubbing reduces switching losses. 5000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C m taS hee t4U . co 4000 C,.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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