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MW4IC2020MBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW4IC2020MBR1 datasheet PDF. This datasheet also covers the MW4IC2020GMBR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

Description

10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.8 pF 100B Chip Capacitors 0.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitors 2.2 pF 100B Chip Capacitor 1 pF 100B Chip Capacitor 0.3 pF 100B Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJE226M03

Features

  • _C 1 10 100 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz (CW) 36 30 ηD, DRAIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW4IC2020GMBR1_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA.
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