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Motorola Electronic Components Datasheet

BCP68T1 Datasheet

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCP68T1/D
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current
applications. The device is housed in the SOT-223 package, which is designed for
medium power surface mount applications.
High Current: IC = 1.0 Amp
The SOT-223 Package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
Available in 12 mm Tape and Reel
Use BCP68T1 to order the 7 inch/1000 unit reel.
Use BCP68T3 to order the 13 inch/4000 unit reel.
COLLECTOR 2,4
The PNP Complement is BCP69T1
BASE
1
EMITTER 3
BCP68T1
Motorola Preferred Device
MEDIUM POWER
NPN SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
25 Vdc
20 Vdc
5 Vdc
1 Adc
1.5 Watts
12 mW/°C
Operating and Storage Temperature Range
DEVICE MARKING
TJ, Tstg
– 65 to 150
°C
CA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction-to-Ambient (surface mounted)
Maximum Temperature for Soldering Purposes
Time in Solder Bath
RθJA 83.3 °C/W
TL 260 °C
10 Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottooroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1


Motorola Electronic Components Datasheet

BCP68T1 Datasheet

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

No Preview Available !

BCP68T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CES
25
— Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
— Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
— Vdc
Collector-Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
10 µAdc
Emitter-Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
10 µAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
hFE
VCE(sat)
50
85
60
——
— 375
——
— 0.5 Vdc
Base-Emitter On Voltage
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
— 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc)
fT — 60 — MHz
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
300
200
100
10
1.0
TYPICAL ELECTRICAL CHARACTERISTICS
300
TJ = 125°C
= 25°C
= – 55°C
VCE = 1.0 V
10 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1000
200
100
70 VCE = 10 V
TJ = 25°C
50 f = 30 MHz
3010
100 200
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Current-Gain-Bandwidth Product
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number BCP68T1
Description MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
Maker Motorola Inc
Total Page 6 Pages
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