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Infineon Technologies Electronic Components Datasheet

BCP68 Datasheet

NPN Silicon AF Transistor

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BCP68 pdf
NPN Silicon AF Transistor
 For general AF applications
 High collector current
 High current gain
 Low collector-emitter saturation voltage
 Complementary type: BCP69 (PNP)
BCP68
4
3
2
1 VPS05163
Type
BCP68
BCP68-10
BCP68-16
BCP68-25
Marking
BCP 68 1 = B
BCP 68-10 1 = B
BCP 68-16 1 = B
BCP 68-25 1 = B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
Values
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
20
25
25
5
1
2
100
200
1.5
150
-65 .. 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
V
V
A
mA
W
°C
K/W
1 Nov-29-2001


Infineon Technologies Electronic Components Datasheet

BCP68 Datasheet

NPN Silicon AF Transistor

No Preview Available !

BCP68 pdf
BCP68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20
-
-V
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 25
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)CBO 25
V(BR)EBO 5
-
-
-
-
Collector cutoff current
VCB = 25 V, IE = 0
ICBO
- - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
- - 100 µA
DC current gain 1)
IC = 5 mA, VCE = 10 V
hFE
50 -
--
DC current gain 1)
IC = 500 mA, VCE = 1 V
BCP68
BCP68-10
hFE
85 - 375
85 100 160
BCP68-16
100 160 250
BCP68-25
160 250 375
DC current gain 1)
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage 1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1
hFE
60 -
-
VCEsat - - 0.5 V
VBE(ON)
- 0.6 -
--1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT - 100 - MHz
1) Pulse test: t =300µs, D = 2%
2
Nov-29-2001


Part Number BCP68
Description NPN Silicon AF Transistor
Maker Infineon Technologies AG
Total Page 4 Pages
PDF Download
BCP68 pdf
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