900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

BU406 Datasheet

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BU406/D
NPN Power Transistors
BU406
BU407
These devices are high voltage, high speed transistors for horizontal deflection
output stages of TV’s and CRT’s.
7 AMPERES
High Voltage: VCEV = 330 or 400 V
Fast Switching Speed: tf = 750 ns (max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLow Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A
Packaged in Compact JEDEC TO–220AB
NPN SILICON
POWER TRANSISTORS
60 WATTS
150 and 200 VOLTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak Repetitive
Peak (10 ms)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation, TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature Range
Symbol
VCEO
VCEV
VCBO
VEBO
IC
IB
PD
TJ, Tstg
BU406
BU407
200 150
400 330
400 330
6
7
10
15
4
60
0.48
– 65 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8from Case for 5 Seconds
Symbol
RθJC
RθJA
TL
Max Unit
2.08 _C/W
70 _C/W
275 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage(1)
(IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEV, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO + 50 Vdc, VBE = 0)
(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C)
BU406 VCEO(sus)
BU407
ICES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 6 Vdc, IC = 0)
BU406, BU407
IEBO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎForward Diode Voltage (IEC = 5 Adc) “D” only
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 1%.
VCE(sat)
VBE(sat)
VEC
Min
200
150
CASE 221A–06
TO–220AB
Typ Max Unit
— — Vdc
——
mAdc
—5
0.1
—1
— 1 mAdc
— 1 Vdc
— 1.2 Vdc
— 2 Volts
(continued)
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1


Motorola Electronic Components Datasheet

BU406 Datasheet

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

No Preview Available !

ÎÎÎÎÎÎÎÎÎÎÎÎÎBEDSÎÎÎÎÎÎÎÎÎÎÎÎÎUWYLCOInNE4uIud(((ITÎÎÎÎÎÎÎÎÎÎÎÎÎABrCIVVtu0CrpC1ecMCCTu6Htn=BCti=IRvÎÎÎÎÎÎÎÎÎÎÎÎÎtCIC–Ne0BII==GBCa.CGL5U1p24aAHoÎÎÎÎÎÎÎÎÎÎÎÎÎ0aA0Cia=n4ALcdHVdViR0—0ctCdAdaC.,ÎÎÎÎÎÎÎÎÎÎÎÎÎA5c7cnRHVrB,C,coAACIAaIesTECdCnEÎÎÎÎÎÎÎÎÎÎÎÎÎsREcdo=T=,R=AwvEL05Ie1iCSÎÎÎÎÎÎÎÎÎÎÎÎÎR,dr=0ATftTIThSd1=IVEiCmTc5PdÎÎÎÎÎÎÎÎÎÎÎÎÎ1R,S0IrceCCoMI,µSShdfHHtÎÎÎÎÎÎÎÎÎÎÎÎÎuaTe)czrsIat)Ctc=ÎÎÎÎÎÎÎÎÎÎÎÎÎSte2r0isÎÎÎÎÎÎÎÎÎÎÎÎÎMtcicHozÎÎÎÎÎÎÎÎÎÎÎÎÎn)tinÎÎÎÎÎÎÎÎÎÎÎÎÎuedÎÎÎÎÎÎÎÎÎÎÎÎÎ(TCÎÎÎÎÎÎÎÎÎÎÎÎÎ= 2ÎÎÎÎÎÎÎÎÎÎÎÎÎ5_CÎÎÎÎÎÎÎÎÎÎÎÎÎunleÎÎÎÎÎÎÎÎÎÎÎÎÎss oÎÎÎÎÎÎÎÎÎÎÎÎÎtherwÎÎÎÎÎÎÎÎÎÎÎÎÎSisyCemftoTÎÎÎÎÎÎÎÎÎÎÎÎÎcnbbootleÎÎÎÎÎÎÎÎÎÎÎÎÎd) ÎÎÎÎÎÎÎÎÎÎÎÎÎM1——ÎÎÎÎÎÎÎÎÎÎÎÎÎi0n ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎT8——y0ÎÎÎÎÎÎÎÎÎÎÎÎÎp ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM0——.a7x5ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMUpµÎÎÎÎÎÎÎÎÎÎÎÎÎnHFsizt ÎÎÎÎÎÎÎÎÎÎÎÎÎ
100
70 TJ = 100°C
50 25°C
30 VCE = 5 V
20
10
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
5 7 10
10
dc
1 BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
TC = 25°C
BU407
BU406
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward
Bias Safe Operating Area
200
2 Motorola Bipolar Power Transistor Device Data


Part Number BU406
Description 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
Maker Motorola Inc
Total Page 4 Pages
PDF Download

BU406 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BU4001B Quad 2-input NOR gate
Rohm
2 BU4001BF Quad 2-input NOR gate
Rohm
3 BU4001F High Voltage CMOS Logic IC
ROHM
4 BU4011 Quad 2-input NAND gate
Rohm
5 BU4011B Quad 2-input NAND gate
Rohm
6 BU4011BF Quad 2-input NAND gate
Rohm
7 BU4011BFV Quad 2-input NAND gate
Rohm
8 BU4015B Dual 4-bit static shift register
Rohm
9 BU4015BF Dual 4-bit static shift register
Rohm





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy