* high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.
* To be used class AB for TV band IV and V.
* Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8
TPV8100B Datasheet (161.12 KB)
TPV8100B
Motorola Inc
161.12 KB
Npn silicon rf power transistor.
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8100B/D NPN Silicon RF Power Transistor The TPV8100B is designed for ou.
📁 Related Datasheet
TPV8100 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
TPV8100B NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
TPV810 Low-Voltage Supervisory Circuit (3PEAK)
TPV811 Low Voltage Supervisory Circuit (3PEAK)
TPV812 Low Voltage Supervisory Circuit (3PEAK)
TPV803 Low-Voltage Supervisory Circuit (3PEAK)
TPV809 Low-Voltage Supervisory Circuit (3PEAK)
TPV8200B RF Power Transistor (Motorola Inc)
TPV8318 Low Quiescent Current Supervisory Circuits (3PEAK)
TPV CHIP ALUMINUM ELECTROLYTIC CAPACITORS (Rubycon)
