MRFE6S9200HSR3
MRFE6S9200HSR3 is RF Power FET manufactured by Motorola Semiconductor.
Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Ro HS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9200H Rev. 1, 12/2008
MRFE6S9200HR3 MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V SINGLE W
- CDMA
LATERAL N
- CHANNEL RF POWER MOSFETs
CASE 465B
- 03, STYLE 1 NI
- 880
MRFE6S9200HR3
CASE 465C
- 02, STYLE 1 NI
- 880S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
- Source Voltage Gate
- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
VDSS
- 0.5, +66
Vdc
- 0.5, +12
Vdc
Tstg
- 65 to...