Download MRFE6S9200HSR3 Datasheet PDF
Motorola Semiconductor
MRFE6S9200HSR3
MRFE6S9200HSR3 is RF Power FET manufactured by Motorola Semiconductor.
Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9200H Rev. 1, 12/2008 MRFE6S9200HR3 MRFE6S9200HSR3 880 MHz, 58 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9200HR3 CASE 465C - 02, STYLE 1 NI - 880S Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) VDSS - 0.5, +66 Vdc - 0.5, +12 Vdc Tstg - 65 to...