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MRFE6S9200HSR3 Datasheet

RF Power FET

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1,
64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness.
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRFE6S9200H
Rev. 1, 12/2008
MRFE6S9200HR3
MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9200HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9200HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
- 0.5, +66
Vdc
VGS
- 0.5, +12
Vdc
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
RθJC
0.29
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
1


Motorola Electronic Components Datasheet

MRFE6S9200HSR3 Datasheet

RF Power FET

No Preview Available !

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
1
μAdc
IGSS
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.1 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
VGS(th)
1.2
2
2.7
Vdc
VGS(Q)
2
2.7
3.8
Vdc
VDS(on)
0.1
0.2
0.3
Vdc
Crss
2.41
pF
Coss
74.61
pF
Ciss
557.27
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21
23
dB
Drain Efficiency
ηD
33
35
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
6
6.36
dB
Adjacent Channel Power Ratio
ACPR
- 40
- 36.5
dBc
Input Return Loss
IRL
- 15
-9
dB
Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 200 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
VBW
10
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 58 W Avg.
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout = 200 W CW
Average Group Delay @ Pout = 200 W CW, f = 880 MHz
Part - to - Part Insertion Phase Variation @ Pout = 200 W CW,
f = 880 MHz, Six Sigma Window
GF
0.5
dB
Φ
0.28
°
Delay
3.72
ns
ΔΦ
15.9
°
Gain Variation over Temperature ( - 30°C to +85°C)
ΔG
0.016
dB/°C
Output Power Variation over Temperature ( - 30°C to +85°C)
ΔP1dB
0.008
dBm/°C
1. Part is internally matched on input.
MRFE6S9200HR3 MRFE6S9200HSR3
2
RF Device Data
Freescale Semiconductor


Part Number MRFE6S9200HSR3
Description RF Power FET
Maker Motorola Semiconductor Products
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