MRFE6S9200HR3
MRFE6S9200HR3 is RF Power FET manufactured by Motorola Semiconductor.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment.
- Typical Single
- Carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1, 64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain
- 21 dB Drain Efficiency
- 35% Device Output Signal PAR
-...
