MRFE6S9200HSR3 - RF Power FET

This page provides the datasheet information for the MRFE6S9200HSR3, a member of the MRFE6S9200HR3 RF Power FET family.

Product Overview

Motorola Semiconductor Products

Part number	MRFE6S9200HSR3
Manufacturer	Motorola Semiconductor Products
File Size	432.83 KB
Description	RF Power FET
Datasheet	MRFE6S9200HSR3 Datasheet
Additional preview pages of the MRFE6S9200HSR3 datasheet.

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9200H Rev. 1, 12/2008 MRFE6S9200HR3 MRFE6S9200HSR3 880 MHz, 58 W AVG. , 28 V SINGLE W - CDMA.

MRFE6S9205HR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6S9205HSR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRFE6S9045NR1 - RF Power FET (Freescale Semiconductor)
MRFE6S9060NR1 - RF Power FET (Freescale Semiconductor)
MRFE6S9125NBR1 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9125NR1 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9130HR3 - RF Power FET (Freescale Semiconductor)
MRFE6S9130HSR3 - RF Power FET (Freescale Semiconductor)
MRFE6S9135HR3 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)
MRFE6S9135HSR3 - N-Channel Enhancement-Mode Lateral MOSFETs (Freescale Semiconductor)

Other Datasheets by Motorola Semiconductor Products

Published: Jul 29, 2009 |