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2N3055 - Complementary Power Transistors

Features

  • Power dissipation - PD = 115W at TC = 25°C.
  • DC current gain hFE = 20 to 70 at IC = 4.0A.
  • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres NPN 2N3055 PNP MJ2955 15 Ampere Complementary Silicon Power.

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Datasheet Details

Part number 2N3055
Manufacturer Multicomp
File Size 230.00 KB
Description Complementary Power Transistors
Datasheet download datasheet 2N3055 Datasheet
Additional preview pages of the 2N3055 datasheet.

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Full PDF Text Transcription

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2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.
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