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Multicomp

2N3700 Datasheet Preview

2N3700 Datasheet

Bipolar Transistor

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Bipolar Transistor
NPN
Description:
This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and
switching applications. The device features high breakdown voltage, Low leakage current,
low capacity, and beta useful over an extremely wide current range.
Maximum Ratings:
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Continuous Collector Current
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C
Operating Junction Temperature Range
Storage Temperature Range,
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Lead Temperature (During Soldering, 1/16"
from case, 60sec max)
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
RthJC
RthJA
TL
Rating
140
80
7
1
0.5
2.85
1.8
10.6
-65 to +200
97
350
300
Pin Configuration:
1. Emitter
2. Base
3. Collector
Unit
V
A
W
mW/°C
 °C
°C/W
°C
www.element14.com
www.farnell.com
www.newark.com
Page <1>
29/04/13 V1.0




Multicomp

2N3700 Datasheet Preview

2N3700 Datasheet

Bipolar Transistor

No Preview Available !

Bipolar Transistor
Electrical Characteristics: (TA = +25°C Unless otherwise specified)
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON Characteristics
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
lCBO
lEBO
DC Current Gain (Note 1)
hFE
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Small - Signal Characteristics
Test Conditions
lC = 30mA, IB = 0
lC= 100µA. IE = 0
IE = 100µA. lC= 0
VCB = 90V, IE = 0
VCB = 90V, IE= 0, TA = +150°C
VBE = 5V, lc = 0
VCE = 10V, lC = 0.1mA
VCE = 10V, lC = 10mA
VCE = 10V, lC = 150mA
VCE = 10V, lC = 150mA, TA = -55°C
VCE = 10V, lC = 500mA
VCE = 10V, lC = 1A
lC = 150mA, IB = 15mA
lC = 500mA, IB = 50mA
lC = 150mA, IB = 15mA
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Collector-Base Time Constant
Noise Figure
fT
Cobo
CIbo
hfe
rb'Cc
NF
VCE = 10V, lC = 50mA, f = 20MHz
VCB = 10V, lE = 0, f = 1MHz
VBE = 500mV, lC = 0, f = 1MHz
VCE = 5V, lC = 1mA, f = 1kHz
VCB = 10V, IE = 10mA, f = 79.8MHz
VCE = 10V, lC- 100µA. f = 1kHz, RS= 1kΩ
Note:
1. Pulse Test : Pulse Width %300µs, Duty Cycle %2%
Min.
80
140
7
-
50
90
100
40
50
15
-
100
-
80
-
Max.
-
0.01
10
0.01
-
300
-
0.2
0.5
1.1
400
12
60
400
4
Unit
V
µA
A
-
V
MHz
pF
-
ps
dB
www.element14.com
www.farnell.com
www.newark.com
Page <2>
29/04/13 V1.0


Part Number 2N3700
Description Bipolar Transistor
Maker Multicomp
PDF Download

2N3700 Datasheet PDF






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