Datasheet Details
| Part number | 2N3700 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 43.85 KB |
| Description | Silicon Planar Epitaxial NPN transistor |
| Datasheet | 2N3700_STMicroelectronics.pdf |
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Overview: 2N3700 GENERAL PURPOSE AMPLIFIERS.
| Part number | 2N3700 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 43.85 KB |
| Description | Silicon Planar Epitaxial NPN transistor |
| Datasheet | 2N3700_STMicroelectronics.pdf |
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The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications.
TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 140 80 7 1 0.5 1.8 1 – 65 to 200 Unit V V V A W W W °C 1/4 T s t g, T j January 1989 2N3700 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97 350 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V (B R)CBO V (BR)CE O * V (B R)E BO V CE( sat )* V BE( sat )* h F E* Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA IC = 1 A I C = 150 mA T amb = – 55 °C hfe fT C EBO C CBO r b b ’C b ’c Small Signal Current Gain Transition Frequency Emitter-base Capacitance Collector-base Capacitance Feedback Time Constant I C = 1 mA f = 1 kHz I C = 50 mA f = 20 MHz IC = 0 f = 1 MHz IE = 0 f = 1 MHz I C = 10 mA f = 4 MHz V CE V CE V CE V CE V CE V CE = 10 = 10 = 10 = 10 = 10 = 10 V V V V V V 50 90 100 50 15 40 V CE = 5 V V CE = 10 V V E B = 0.5 V V CB = 10 V V CB = 10 V 25 80 100 60 12 400 400 MHz pF pF ps Test Conditions V CB = 90 V V CB = 90 V V EB = 5 V I C = 100 µA I C = 30 mA I E = 100 µA I C = 150 mA I C = 500 mA I C = 150 mA I B = 15 mA I B = 50 mA I B = 15 mA 140 80 7 0.2 0.5 1.1 T amb = 150 °C Min.
Typ.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3700 | Low Power Transistor | ON Semiconductor |
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2N3700 | LOW POWER NPN SILICON TRANSISTOR | Microsemi Corporation |
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2N3700 | SILICON NPN TRANSISTOR | TT |
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2N3700 | Bipolar Transistor | Multicomp |
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2N3700 | NPN Low Power Silicon Transistor | MA-COM |
| Part Number | Description |
|---|---|
| 2N3700HR | NPN transistor |
| 2N3725 | Silicon Planar Epitaxial transistor |
| 2N3771 | HIGH POWER NPN SILICON TRANSISTOR |
| 2N3772 | HIGH POWER NPN SILICON TRANSISTOR |
| 2N3019 | SMALL SIGNAL NPN TRANSISTOR |
| 2N3019HR | Hi-Rel NPN bipolar transistor |
| 2N3055 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N3114 | NPN Transistor |
| 2N3209 | Silicon Planar PNP Transistor |
| 2N3250 | Silicon Planar PNP Transistor |