STMicroelectronics 2N3700
The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications.| Part No. | 2N3700 |
|---|---|
| Datasheet | 2N3700 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon Planar Epitaxial NPN transistor |
| Buy | Stock & Price |
DESCRIPTION
TO-18 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 140 80 7 1 0.5 1.8 1 – 65 to 200 Unit V V V A W W W °C 1/4 T s t g, T j January 1989 2N3700 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97 350 °C/W °C/WELECTRICAL CHARACTERISTICS
(T amb = 25 °C unless otherwise specified) Symbol I CBO I E BO V (B R)CBO V (BR)CE O * V (B R)E BO V CE( sat )* V BE( sat )* h F E* Parameter Collector Cutoff Current (I E = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Sat...
