2N3700 Datasheet and Specifications PDF

The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RA.

) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain I C = 0.1 mA I C = 10 mA I C = 150 mA I C = 500 mA IC = 1 A I C = 150 mA T amb =
* .

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collec.

dix A for package ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) outline Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc V(BR)CBO 140 Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc V(BR)EBO 7.0 Vdc Collector-Em.

2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characterist.

* MIL
*PRF
*19500/391 Qualified
* Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector
*Emitter Voltage VCEO 80 Collector
*Base Voltage VCBO 140 Emitter
*Base Voltage VEBO 7.0 Collector Current
* Continuous IC 1.0 T.

SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Op.

ate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4J.