Description
This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications.
Features
- high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambien.
2N3700 Datasheet
