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2N3700 - Bipolar Transistor

General Description

This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications.

Key Features

  • high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambien.

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Datasheet Details

Part number 2N3700
Manufacturer Multicomp
File Size 225.65 KB
Description Bipolar Transistor
Datasheet download datasheet 2N3700 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistor NPN Description: This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications. The device features high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range.