MACOM Technology Solutions 2N3700
NPN Low Power Silicon Transistor
FEATURES
● JANS Qualified to MIL-PRF-19500/391● 2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057
● Lightweight & Low Power
● Ideal for Space, Military, & other High Reliability
APPLICATIONS
● TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V1ELECTRICAL CHARACTERISTICS
Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Test Conditions IC = 30 mA VBC = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc IC = 150 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA Symbol Units Min. Max.