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2N3700 Datasheet PDF

TT 2N3700

SILICON NPN TRANSISTOR

Part No. 2N3700
Datasheet 2N3700 Download
Manufacturer
TT
Description SILICON NPN TRANSISTOR
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2N3700 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7.0V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 0.5W Derate Above TA = 25°C 2.9mW/°C TC = 25°C 1.0W Derate Above TC = 25°C 5.7mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. 350 175 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Lim...
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