Datasheet Details
| Part number | 2N3700 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 297.66 KB |
| Description | NPN TRANSISTORS |
| Datasheet | 2N3700-CentralSemiconductor.pdf |
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Overview: 2N3700 2N3701 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | 2N3700 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 297.66 KB |
| Description | NPN TRANSISTORS |
| Datasheet | 2N3700-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 140 80 7.0 1.0 1.8 500 -65 to +200 350 97.2 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3700 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V - 10 ICBO VCB=90V, TA=150°C - 10 IEBO VEB=5.0V - 10 BVCBO IC=100μA 140 - BVCEO IC=30mA 80 - BVEBO IE=100μA 7.0 - VCE(SAT) IC=150mA, IB=15mA - 0.2 VCE(SAT) IC=500mA, IB=50mA - 0.5 VBE(SAT) IC=150mA, IB=15mA - 1.1 hFE VCE=10V, IC=0.1mA 50 - hFE VCE=10V, IC=10mA 90 - hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=150mA, TA=-55°C 40 - hFE VCE=10V, IC=500mA 50 - hFE VCE=10V, IC=1.0A 15 - 2N3701 MIN MAX - 10 - 10 - 10 140 - 80 - 7.0 - - 0.2 - 0.5 - 1.1 30 100 40 120 40 120 - - 30 100 15 - UNITS V V V A W mW °C °C/W °C/W UNITS nA μA nA V V V V V V R1 (4-March 2014) 2N3700 2N3701 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX fT VCE=10V, IC=50mA, f=20MHz 100 400 80 400 Cob VCB=10V, IE=0, f=1.0MHz - 12 - 12 Cib VEB=0.5V, IC=0, f=1.0MHz - 60 - 60 hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 80 400 30 200 rb’Cc VCB=10V, IE=10mA, f=4.0MHz 25 400 25 400 NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ - 4.0 - 4.0 UNITS MHz pF pF pS dB TO-18 CASE - MECHANICAL OUTLINE w w w.
c e n t r a l s e m i .
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2N3700 | Silicon Planar Epitaxial NPN transistor | STMicroelectronics |
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2N3700 | SILICON NPN TRANSISTOR | TT |
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2N3700 | Bipolar Transistor | Multicomp |
| Part Number | Description |
|---|---|
| 2N3701 | NPN TRANSISTORS |
| 2N3702 | PNP Transistor |
| 2N3703 | PNP Transistor |
| 2N3713 | SILICON NPN TRANSISTORS |
| 2N3714 | SILICON NPN TRANSISTORS |
| 2N3715 | SILICON NPN TRANSISTORS |
| 2N3716 | SILICON NPN TRANSISTORS |
| 2N3724 | NPN SILICON TRANSISTOR |
| 2N3725 | NPN SILICON TRANSISTOR |
| 2N3725A | NPN SILICON TRANSISTOR |