2N3700UB Datasheet | MACOM Technology Solutions

2N3057A, 2N3700, 2N3700UB NPN Low Power Silicon Transistor Features - JANS Qualified to MIL-PRF-19500/391 - 2N3700 & 2N3700UB available in JANSR JEDEC registered 2N3700, 2N3057 - Lightweight & Low Power - Ideal for Space, Military, & other High Reliability Applications - TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UB Package Styles Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Dynamic Characteristics Test Conditions IC = 30 m A VBC = 140 V VEB = 7 V VCE = 90 V VEB = 5 Vdc IC = 150 m A, VCE = 10 V IC = 10 m A, VCE = 10 V IC = 500 m A, VCE = 10 V IC = 1 m A, VCE = 10 V IC = 150 m A, IB = 15 m A IC = 500 m A, IB = 50 m A IC = 150 m A, IB = 15 m...