silicon transistor.
high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range.
Maximum Ratings:
Characteristic Collector-Base Voltage C.
This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide .
A silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range.
Maximum.
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