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2N4037 - Silicon Transistor

General Description

A silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications.

Key Features

  • high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Lead temperature (During Soldering, 1/1.

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Datasheet Details

Part number 2N4037
Manufacturer Multicomp
File Size 232.36 KB
Description Silicon Transistor
Datasheet download datasheet 2N4037 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Transistor Collector 3 2 Base 1 Emitter Description: A silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Lead temperature (During Soldering, 1/16" from case, 60sec max) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC TL Rating 60 40 7 1 1 5.72 5 28.