VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
PNP MJE2955T
NPN MJE30.
Full PDF Text Transcription for MJE2955T (Reference)
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MJE2955T. For precise diagrams, and layout, please refer to the original PDF.
MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Feat...
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for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 (Minimum) at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres PNP MJE2955T NPN MJE3055T 10 Ampere Complemetary Silicon Power Transistors 60 Volts 75 Watts TO-220 Page 1 31/05/05 V1.
MJE2955T Datasheet
