Download the MJE3055T datasheet PDF.
This datasheet also covers the MJE2955T variant, as both devices belong to the same complementary power transistors family and are provided as variant models within a single manufacturer datasheet.
Key Features
Power dissipation-PD = 75W at TC = 25°C.
DC current gain hFE = 20 (Minimum) at IC = 4.0A.
VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
PNP MJE2955T
NPN MJE30.
Full PDF Text Transcription for MJE3055T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MJE3055T. For precise diagrams, and layout, please refer to the original PDF.
MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Feat...
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for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 (Minimum) at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres PNP MJE2955T NPN MJE3055T 10 Ampere Complemetary Silicon Power Transistors 60 Volts 75 Watts TO-220 Page 1 31/05/05 V1.
MJE3055T Datasheet
