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TIP31 - High Power Bipolar Transistor

Key Features

  • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C.
  • Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A.
  • Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitt.

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Datasheet Details

Part number TIP31
Manufacturer Multicomp
File Size 238.11 KB
Description High Power Bipolar Transistor
Datasheet download datasheet TIP31 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C • Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A • Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current - continuous - peak Base current Total power dissipation at tc = 25°C derate above 25°C Operating and storage junction temperature range Minimum Maximum 14.68 15.31 9.78 10.42 5.01 6.52 13.06 14.62 3.57 4.07 2.42 3.66 1.12 1.