Multicomp TIP31
High Power Bipolar Transistor
| Part No. | TIP31 |
|---|---|
| Datasheet | TIP31 Download |
| Manufacturer |  Multicomp |
| Description | High Power Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
:● Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C
● Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A
● Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case)
MAXIMUM RATINGS
Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current - continuous - peak Base current Total power dissipation at tc = 25°C derate above 25°C Operating and storage junction temperature range Minimum Maximum 14.68 15.31 9.78 10.42 5.01 6.52 13.06 14.62 3.57 4.07 2.42 3.66 1.12 1.36 0.72 0.96 4.22 4.98 1.14 1.38 2.2 2.97 0.33 0.55 2.48 2.98 3.7 3.9 Dimensions : Millimetres NPN TIP31A TIP32C PNP TIP32A TIP32C 3 Amperes Complementary Silicon Power Transistors
