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TIP31 - Epitaxial Planar NPN Transistor

Key Features

  • Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB.

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Other Datasheets by Galaxy Microelectronics

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TIP31A Epitaxial Planar NPN Transistor
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Epitaxial Planar NPN Transistor FEATURES  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage TIP31 TIP31A TIP31B TIP31C TIP31 TIP31A TIP31B TIP31C Value 40 60 80 100 40 60 80 100 Unit V V VEBO Emitter-Base Voltage 5V Collector Current IC DC Pulse 3 5 A IB Base Crrent 1A PC Collector Dissipation Ta=25℃ 2 W Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ X050 Rev.A www.gmesemi.com 1 Production specification Epitaxial Planar NPN Transistor TIP31/31A/31B/31C ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.