Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A - Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) - plement to Type TIP32 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
Representative TIP31 image (package may vary by manufacturer)
| Part Number | Manufacturer | Description |
|---|---|---|
| TIP31C | Rectron | Power Transistors |
| TIP31C | Motorola Semiconductor | POWER TRANSISTORS |
| TIP31D | Power Innovations Limited | NPN SILICON POWER TRANSISTORS |
| TIP31B | Bourns | NPN SILICON POWER TRANSISTORS |
| TIP31 | SEMIHOW | PNP Epitaxial Silicon Darlington Transistor |
| TIP31A | SEMIHOW | PNP Epitaxial Silicon Darlington Transistor |
| TIP31B | SEMIHOW | PNP Epitaxial Silicon Darlington Transistor |
| TIP31B | SeCoS Halbleitertechnologie GmbH | NPN Plastic-Encapsulate Transistor |
| TIP31A | Nell Power Semiconductor | Complementary Silicon Power Transistor |
| TIP31A | NTE Electronics | Silicon NPN Transistors |
