Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.2V(Max.)@IC= 3A
- Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 60V(Min)
- plement to Type TIP32A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general purpose amplifier and switching...
