TIP31C
Description
DC Current Gain -hFE = 25(Min)@ IC= 1A - Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) - plement to Type TIP32C - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: TIP31C
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 206.14 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| TIP31C | SeCoS Halbleitertechnologie GmbH | NPN Plastic-Encapsulate Transistor |
| TIP31C | NTE Electronics | Silicon NPN Transistors |
| TIP31 | SeCoS Halbleitertechnologie GmbH | NPN Plastic-Encapsulate Transistor |
| TIP31A | SeCoS Halbleitertechnologie GmbH | NPN Plastic-Encapsulate Transistor |
| TIP35BF | Continental Device India | POWER TRANSISTORS |
| TIP36F | Continental Device India | POWER TRANSISTORS |
| TIP34 | Power Innovations Limited | PNP SILICON POWER TRANSISTORS |
| TIP34A | SavantIC | SILICON POWER TRANSISTOR |
| TIP30 | SavantIC | Silicon PNP Power Transistors |
| TIP34A | NTE Electronics | Silicon Complementary High-Power Transistors |