NCE6008AS mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ)
* High density cell design for ultra low Rdson
* Fully character.
General Features
* VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ)
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