NCE0117 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
GENERAL FEATURES
* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
* High density cell design for ultra .
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