NCE0110AS Datasheet | NCE Power Semiconductor

Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current Schematic diagram Application - DC/DC Primary Side Switch - Tele/Server - Synchronous Rectification Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 100 ±20 10 7 70 3.1 -55 To...