Datasheet Details
| Part number | NCE0110AS |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 437.55 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE0110AS Datasheet
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General Description
The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ).
- Special process technology for high ESD capability.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current Schematic diagram.