NCE0110AS Description
The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE0110AS Key Features
- VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- DC/DC Primary Side Switch
- Tele/Server
- Synchronous Rectification