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NCE0110AS - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE0110AS N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE0110AS

Datasheet Details

Part number	NCE0110AS
Manufacturer	NCE Power Semiconductor
File Size	437.55 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0110AS Datasheet
Additional preview pages of the NCE0110AS datasheet.

Product details

Description

The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current Schematic diagram.

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Published: Feb 7, 2016 |