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NCE0110K - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number NCE0110K
Manufacturer NCE Power Semiconductor
File Size 440.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0110K Datasheet
Additional preview pages of the NCE0110K datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE0110K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =9.
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