NCE0110K Datasheet | NCE Power Semiconductor

Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =100V,ID =9.6A RDS(ON) < 140mΩ @ VGS=10V (Typ:108mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application Schematic diagram Only Use - Hard switched and high frequency circuits - Uninterruptible power supply 100% UIS TESTED! times Marking and pin assignment g 100% ∆Vds TESTED! gshen Package Marking and Ordering Information n Device Marking Device Device Package To NCE0110K TO-252-2L Reel Size - TO-252-2L top view Tape width - Quantity - r Absolute Maximum Ratings (TC=25℃unless otherwise noted) Fo Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Drain Current-Continuous(TC=100℃)...