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NCE0117 - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE0117 N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE0117

Datasheet Details

Part number	NCE0117
Manufacturer	NCE Power Semiconductor
File Size	381.20 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0117 Datasheet
Additional preview pages of the NCE0117 datasheet.

Product details

Description

The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram.

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Published: Jun 6, 2015 |