n-channel enhancement mode power mosfet.
* VDS = 100V,ID =57A
RDS(ON) < 14.5mΩ @ VGS=10V
(Typ:12.5mΩ)
Schematic diagram
* Special process technology for high ESD capability
* High density cell des.
General Features
* VDS = 100V,ID =57A
RDS(ON) < 14.5mΩ @ VGS=10V
(Typ:12.5mΩ)
Schematic diagram
* Special p.
The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID =57A
RDS(ON) < 14.5mΩ @ VGS=10V
(Typ:12.5mΩ)
Schemat.
Image gallery
TAGS
Download (Size : 683.92KB)