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NCE0157A2 - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 100V,ID =57A RDS(ON) < 14.5mΩ @ VGS=10V (Typ:12.5mΩ) Schematic diagram.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number NCE0157A2
Manufacturer NCE Power Semiconductor
File Size 683.92 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE0157A2 Datasheet

Full PDF Text Transcription for NCE0157A2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE0157A2. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE0157A2 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to prov...

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ption The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =57A RDS(ON) < 14.5mΩ @ VGS=10V (Typ:12.

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