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NCE0157A2 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0157A2
Manufacturer	NCE Power Semiconductor
File Size	683.92 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0157A2-NCEPowerSemiconductor.pdf

NCE0157A2 Product details

Description

The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =57A RDS(ON) < 14.5mΩ @ VGS=10V (Typ:12.5mΩ) Schematic diagram.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Jun 2, 2018 |