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NCE0160AG - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0160AG
Manufacturer	NCE Power Semiconductor
File Size	349.01 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0160AG-NCEPowerSemiconductor.pdf

NCE0160AG Product details

Description

The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =60A RDS(ON) < 17mΩ @ VGS=10V (Typ:13.5mΩ) Schematic diagram.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Marking and pin assignment.

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Published: Jun 2, 2018 |