n-channel enhancement mode power mosfet.
* VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.6V
* Special designed for Convertors and power controls
* High density cell design for ultra low Rdson
* Fully.
GENERAL FEATURES
* VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.6V
* Special designed for Convertors and power co.
The NCE0160S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
GENERAL FEATURES
* VDS = 100V,ID =60A RDS(ON) <16.
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