NCE01H29T Description
The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
NCE01H29T Key Features
- VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
- Good stability and uniformity with high EAS
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- DC motor drive
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits