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NCE01H29T Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE01H29T
Manufacturer NCE Power Semiconductor
File Size 312.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01H29T Datasheet

General Description

The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of other applications.

General

Overview

http://www.ncepower.com Pb Free Product NCE01H29T NCE N-Channel Enhancement Mode Power.

Key Features

  • VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）.
  • Good stability and uniformity with high EAS.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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