NCE01H29T datasheet, mosfet equivalent, NCE Power Semiconductor

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NCE01H29T Features and benefits

* VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
* Good stability and uniformity with high EAS
* High density cell design for ultra low Rdson
*.

NCE01H29T Application

General Features
* VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
* Good stability and uniformity w.

NCE01H29T Description

The NCE01H29T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features
* VDSS =100V,ID =290A RDS(ON) < 3.0mΩ @ VGS=10V （Typ：2.4mΩ）
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