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NCE01P18 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Key Features

  • VDS =-100V,ID =-18A RDS(ON).

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Datasheet Details

Part number NCE01P18
Manufacturer NCE Power Semiconductor
File Size 324.89 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE01P18 Datasheet

Full PDF Text Transcription for NCE01P18 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE01P18. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE01P18 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18 uses advanced trench technology and design to provid...

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tion The NCE01P18 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.

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