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NCE Power Semiconductor

NCE01P18 Datasheet Preview

NCE01P18 Datasheet

P-Channel Enhancement Mode Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCE01P18
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE01P18 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications. It is ESD protested.
General Features
VDS =-100V,ID =-18A
RDS(ON) <100m@ VGS=-10V
(Typ:85m)
Super high dense cell design
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
Application
Power management in notebook computer
Portable equipment and battery powered systems
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01P18
NCE01P18
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-100
±20
-18
-12
-72
70
0.56
-55 To 150
Unit
V
V
A
A
A
W
W/
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE01P18 Datasheet Preview

NCE01P18 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE01P18
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 1.79 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
-100
-
-
V
VDS=-100V,VGS=0V
- - 1 μA
VGS=±20V,VDS=0V
- - ±20 μA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-16A
VDS=-50V,ID=-10A
-1 -1.9
-3
- 85 100
5-
-
V
m
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=-25V,VGS=0V,
F=1.0MHz
- 1300
- 400
-
-
PF
PF
Crss
- 240
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=-50V,ID=-16A
VGS=-10V,RGEN=9.1
VDS=-80V,ID=-16A,
VGS=-10V
- 16
- 73
- 34
- 57
- 61
- 14
- 29
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=-10A
- - -1.2 V
IS
-
- - -18
A
trr
TJ = 25°C, IF =-16A
- 88.3
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 65.9
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=-50V,VG=-10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0


Part Number NCE01P18
Description P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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