• Part: NCE01P18D
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 304.67 KB
Download NCE01P18D Datasheet PDF
NCE01P18D page 2
Page 2
NCE01P18D page 3
Page 3

NCE01P18D Key Features

  • VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low on-Resistance
  • Power management in notebook puter -Portable equipment and battery powered systems
  • Tape width
  • Quantity