• Part: NCE01P18
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 324.89 KB
Download NCE01P18 Datasheet PDF
NCE01P18 page 2
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NCE01P18 page 3
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NCE01P18 Key Features

  • VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance
  • Power management in notebook puter
  • Portable equipment and battery powered systems
  • Tape width
  • Quantity