NCE01P18D Description
The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE01P18D Key Features
- VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low on-Resistance
- Power management in notebook puter -Portable equipment and battery powered systems
- Tape width
- Quantity