NCE0205I mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
（Typ：520mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .
General Features
* VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V
（Typ：520mΩ）
* High density cell design for ult.
Image gallery
Download