NCE0205I - N-Channel Enhancement Mode Power MOSFET

Description

The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V （Typ：520mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0205I
Manufacturer	NCE Power Semiconductor
File Size	296.52 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0205I Datasheet
Additional preview pages of the NCE0205I datasheet.

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http://www.ncepower.com Pb Free Product NCE0205I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Apr 12, 2016 |