Full PDF Text Transcription for NCE1205 (Reference)
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http://www.ncepower.com Pb Free Product NCE1205 N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent...
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ption The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.5V RDS(ON) <42mΩ @ VGS=2.5V RDS(ON) < 80mΩ @ VGS=1.8V ● P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.5V RDS(ON) <110mΩ @ VGS=-2.5V RDS(ON) < 220mΩ @ VGS=-1.
NCE1205 Datasheet
