NCE12P09S - P-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE12P09S
Manufacturer	NCE Power Semiconductor
File Size	365.48 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE12P09S-NCEPowerSemiconductor.pdf

NCE12P09S Product details

Description

The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V.
Advanced trench MOSFET process technology Only.
Ultra low on-resistance with low gate charge.

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Published: Jun 2, 2018 |