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NCE12P09S Datasheet - NCE Power Semiconductor

P-Channel Enhancement Mode Power MOSFET

NCE12P09S Features

* VDS = -12V,ID = -9A Schematic diagram RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V

* Advanced trench MOSFET process technology Only

* Ultra low on-resistance with low gate charge Application

* PWM applications

* Load switch

* Battery charge in cellular handset

NCE12P09S Datasheet (365.48 KB)

Preview of NCE12P09S PDF

Datasheet Details

Part number:

NCE12P09S

Manufacturer:

NCE Power Semiconductor

File Size:

365.48 KB

Description:

P-channel enhancement mode power mosfet.

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NCE12P09S P-Channel Enhancement Mode Power MOSFET NCE Power Semiconductor

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