NCE1205 Description
The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
NCE1205 Key Features
- P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.5V RDS(ON) <110mΩ @ VGS=-2.5V RDS(ON) < 220mΩ @ VGS=-1.8V
- Load Switch for Portable Devices
- Tape width
- Quantity