NCE1205 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features - N-Channel VDS =12V,ID =5A RDS(ON) <32mΩ @ VGS=4.5V RDS(ON) <42mΩ @ VGS=2.5V RDS(ON) < 80mΩ @ VGS=1.8V - P-Channel VDS = -12V,ID = -5A RDS(ON) <74mΩ @ VGS=-4.5V RDS(ON) <110mΩ @ VGS=-2.5V RDS(ON) < 220mΩ @ VGS=-1.8V - Load Switch for Portable Devices N-channel P-channel Pin assignment Package Marking and Ordering Information Device Marking Device Device Package DFN2X2-6L Reel Size - Tape width - Quantity -...