NCE1507I - N-Channel Enhancement Mode Power MOSFET

Description

The NCE1507I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 150V,ID = 7A RDS(ON) < 290mΩ @ VGS=10V (Typ:255mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE1507I
Manufacturer	NCE Power Semiconductor
File Size	293.04 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE1507I Datasheet
Additional preview pages of the NCE1507I datasheet.

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http://www.ncepower.com Pb Free Product NCE1507I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1507I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Apr 12, 2016 |