NCE15H10D - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Key Features

VDS =150V,ID =100A RDS(ON).

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NCE15H10D n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE15H10D
Manufacturer	NCE Power Semiconductor
File Size	318.25 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE15H10D Datasheet

Full PDF Text Transcription for NCE15H10D (Reference)

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http://www.ncepower.com Pb Free Product NCE15H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H10D uses advanced trench technology and design to prov...

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ption The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =150V,ID =100A RDS(ON) <11mΩ @ VGS=10V (Typ:9.

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